Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106404
Title: Optical and electrical properties of two-dimensional palladium diselenide
Authors: Zhang, George
Amani, Matin
Chaturvedi, Apoorva
Tan, Chaoliang
Bullock, James
Song, Xiaohui
Kim, Hyungjin
Lien, Der-Hsien
Scott, Mary C.
Zhang, Hua
Javey, Ali
Keywords: Engineering::Materials
Optical Absorption
Band Gap
Issue Date: 2019
Source: Zhang, G., Amani, M., Chaturvedi, A., Tan, C., Bullock, J., Song, X., . . . Javey, A. (2019). Optical and electrical properties of two-dimensional palladium diselenide. Applied Physics Letters, 114(25), 253102-. doi:10.1063/1.5097825
Series/Report no.: Applied Physics Letters
Abstract: Two-dimensional (2D) noble-metal dichalcogenides exhibit exceptionally strong thickness-dependent bandgaps, which can be leveraged in a wide variety of device applications. A detailed study of their optical (e.g., optical bandgaps) and electrical properties (e.g., mobilities) is important in determining potential future applications of these materials. In this work, we perform detailed optical and electrical characterization of 2D PdSe2 nanoflakes mechanically exfoliated from a single-crystalline source. Layer-dependent bandgap analysis from optical absorption results indicates that this material is an indirect semiconductor with bandgaps of approximately 1.37 and 0.50 eV for the monolayer and bulk, respectively. Spectral photoresponse measurements further confirm these bandgap values. Moreover, temperature-dependent electrical measurements of a 6.8-nm-thick PdSe2 flake-based transistor show effective electron mobilities of 130 and 520 cm2 V−1 s−1 at 300 K and 77 K, respectively. Finally, we demonstrate that PdSe2 can be utilized for short-wave infrared photodetectors. A room-temperature specific detectivity (D*) of 1.8 × 1010 cm Hz1/2 W−1 at 1 μm with a band edge at 1.94 μm is achieved on a 6.8-nm-thick PdSe2 flake-based photodetector.
URI: https://hdl.handle.net/10356/106404
http://hdl.handle.net/10220/49628
ISSN: 0003-6951
DOI: 10.1063/1.5097825
Rights: © 2019 The Author(s). All rights reserved. This paper was published by AIP in Applied Physics Letters and is made available with permission of The Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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