Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/106808
Title: Ion implantation in silicon to facilitate testing of photonic circuits
Authors: Reed, Graham T.
Milosevic, Milan M.
Chen, Xia
Cao, Wei
Littlejohns, Callum George
Wang, Hong
Khokhar, Ali Z.
Thomson, David J.
Keywords: Engineering::Electrical and electronic engineering
Grating Couplers
Ion Implantation
Issue Date: 2017
Source: Reed, G. T., Milosevic, M. M., Chen, X., Cao, W., Littlejohns, C. G., Wang, H., . . . Thomson, D. J. (2017). Ion implantation in silicon to facilitate testing of photonic circuits. Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX, 10107, 1010709-. doi:10.1117/12.2252770
Series/Report no.: Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX
Abstract: In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. We demonstrate the principle of a series of devices for wafers scale testing and have also implemented the ion implantation based refractive index change in integrated photonics devices for device trimming.
URI: https://hdl.handle.net/10356/106808
http://hdl.handle.net/10220/49652
ISSN: 0277-786X
DOI: http://dx.doi.org/10.1117/12.2252770
Rights: © 2017 SPIE. All rights reserved. This paper was published in Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX and is made available with permission of SPIE.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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