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|Title:||Ion implantation in silicon to facilitate testing of photonic circuits||Authors:||Reed, Graham T.
Milosevic, Milan M.
Littlejohns, Callum George
Khokhar, Ali Z.
Thomson, David J.
|Keywords:||Engineering::Electrical and electronic engineering
|Issue Date:||2017||Source:||Reed, G. T., Milosevic, M. M., Chen, X., Cao, W., Littlejohns, C. G., Wang, H., . . . Thomson, D. J. (2017). Ion implantation in silicon to facilitate testing of photonic circuits. Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX, 10107, 1010709-. doi:10.1117/12.2252770||Series/Report no.:||Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX||Abstract:||In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to develop a range of optical devices that are reported in this paper. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. We demonstrate the principle of a series of devices for wafers scale testing and have also implemented the ion implantation based refractive index change in integrated photonics devices for device trimming.||URI:||https://hdl.handle.net/10356/106808
|ISSN:||0277-786X||DOI:||http://dx.doi.org/10.1117/12.2252770||Rights:||© 2017 SPIE. All rights reserved. This paper was published in Proceedings of SPIE - Smart Photonic and Optoelectronic Integrated Circuits XIX and is made available with permission of SPIE.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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