Please use this identifier to cite or link to this item:
Title: Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics
Authors: Kulkarni, Mohit Rameshchandra
Tiwari, Nidhi
Rajput, Mayank
John, Rohit Abraham
Nguyen, Anh Chien
Mathews, Nripan
Keywords: Engineering::Materials
Transparent Amorphous Oxide Semiconductor
Thin Films
Issue Date: 2018
Source: Tiwari, N., Rajput, M., John, R. A., Kulkarni, M. R., Nguyen, A. C., & Mathews, N. (2018). Indium tungsten oxide thin films for flexible high-performance transistors and neuromorphic electronics. ACS Applied Materials and Interfaces, 10(36), 30506-30513. doi:10.1021/acsami.8b06956
Series/Report no.: ACS Applied Materials and Interfaces
Abstract: Thin-film transistors (TFTs) with high electrical performances (mobility > 10 cm2/V s, Vth < 1 V, SS < 1 V/decade, on/off ratio ≈ 106) obtained from the silicon- and oxide-based single-crystalline semiconductor materials require high processing temperature and hence are not suitable for flexible electronics. Amorphous oxide-based transparent electronic devices are attractive to meet emerging technological demands where crystalline oxide-/silicon-based architectures cannot provide a solution. Here, we tackle this problem by using a novel amorphous oxide semiconducting material—namely, indium tungsten oxide (IWO)—as the active channel in flexible TFTs (FTFTs). Post-annealing temperature as low as 270 °C for amorphous IWO thin films deposited by radio frequency sputtering at room temperature could result in smooth morphology (Rrms ≈ 0.42 nm), good adhesion, and high carrier density (n ≈ 7.19 × 1018 cm–3). Excellent TFT characteristics of flexible devices could be achieved with linear field effect mobility μFE ≈ 25.86 cm2/V s, subthreshold swing SS ≈ 0.30 V/decade, threshold voltage Vth ≈ −1.5 V, and on/off ratio Ion/Ioff ≈ 5.6 × 105 at 3 V and stable operation during bending of the FTFT. Additionally, IWO TFTs were implemented as synapses, the building block for neuromorphic computing. Paired-pulse facilitation up to 138% was observed and showed an exponential decay resembling chemical synapses. Utilizing this characteristic, a high-pass dynamic temporal filter was devised providing increased gain from 1.55 to 21 when frequency was raised from 22 to 62 Hz. The high performance and stability of flexible TFTs obtained with IWO films demonstrate their promise for low-voltage electronic applications.
ISSN: 1944-8244
DOI: 10.1021/acsami.8b06956
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:ERI@N Journal Articles
MSE Journal Articles

Files in This Item:
File Description SizeFormat 
Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors.pdf1.34 MBAdobe PDFThumbnail

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.