Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/85475
Title: Failure analysis of damages on advanced technologies induced by picosecond pulsed laser during space radiation SEE testing
Authors: Chua, C. T.
Liu, Q.
Chef, Samuel
Sanchez, K.
Pcrdu, P.
Gan, Chee Lip
Keywords: Pulsed Laser
1064 nm
Engineering::Materials
Issue Date: 2018
Source: Chua, C., Liu, Q., Chef, S., Sanchez, K., Pcrdu, P., & Gan, C. (2018). Failure Analysis of Damages on Advanced Technologies Induced by Picosecond Pulsed Laser During Space Radiation SEE Testing. 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 1-6. doi:10.1109/IPFA.2018.8452544
Series/Report no.: 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Abstract: Picosecond pulsed laser, customarily perceived to offer advantages of flexibility and ease of testing over heavy ion particle accelerator test, was conducted on a chain of inverters during Single Event Effect (SEE) evaluation. In this paper, we report on the unexpected permanent damage induced by 1064 nm pulsed laser on test structures fabricated with 65 nm bulk CMOS process technology. Light emission microscopy (EMMI) localized hotspots within the area previously scanned by the pulsed laser. Electro Optical Frequency Mapping (EOFM) verified the undesired termination of signal propagation along the chain of inverters while Electro Optical Probing (EOP) confirmed the unexpected phase change and eventual loss of the output signal waveform. Focused Ion Beam (FIB), Transmission Microscopy (TEM) and Energy Dispersive X-ray spectroscopy (EDX) confirmed the physical failure and identified nickel as the diffusing species. This paper aims to advise caution to the research communities (both space radiation and optical failure analysis) in employing similar laser test technique and highlights the need to define the safe operating region of such technique, especially for emerging technology nodes.
URI: https://hdl.handle.net/10356/85475
http://hdl.handle.net/10220/50129
DOI: http://dx.doi.org/10.1109/IPFA.2018.8452544
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/IPFA.2018.8452544.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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