Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/107586
Title: Growth and characterization of InSb on (1 0 0) Si for mid-infrared application
Authors: Jia, Bo Wen
Tan, Kian Hua
Loke, Wan Khai
Wicaksono, Satrio
Yoon, Soon Fatt
Keywords: Engineering::Electrical and electronic engineering::Semiconductors
Compound Semiconductor
Molecule Beam Epitaxy
Issue Date: 2018
Source: Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Growth and characterization of InSb on (1 0 0) Si for mid-infrared application. Applied Surface Science, 440, 939-945. doi:10.1016/j.apsusc.2018.01.219
Series/Report no.: Applied Surface Science
Abstract: Monolithic integration of InSb on (1 0 0) Si is a practical approach to realizing on-chip mid-infrared photonic devices. An InSb layer was grown on a (1 0 0) Si substrate using an AlSb/GaSb buffer containing InSb quantum dots (QDs). The growth process for the buffer involved the growth of GaSb on Si using an interfacial misfit array, followed by InSb QDs on AlSb to decrease the density of microtwins. InSb layers were separately grown on AlSb and GaSb surfaces to compare the effect of different interfacial misfit arrays. The samples were characterized using transmission electron microscopy and X-ray diffraction to determine the structural properties of the buffer and InSb layers. The InSb on the AlSb sample exhibited higher crystal quality than the InSb on GaSb sample due to a more favorable arrangement of interfacial misfit dislocations. Hall measurements of unintentionally doped InSb layers demonstrated a higher carrier mobility in the InSb on the AlSb sample than in InSb on GaSb. Growing InSb on AlSb also improved the photoresponsivity of InSb as a photoconductor on Si.
URI: https://hdl.handle.net/10356/107586
http://hdl.handle.net/10220/50338
ISSN: 0169-4332
DOI: http://dx.doi.org/10.1016/j.apsusc.2018.01.219
Rights: © 2018 Elsevier B.V. All rights reserved.. This paper was published in Applied Surface Science and is made available with permission of Elsevier B.V.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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