Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/107592
Title: Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
Authors: Gao, Yu
Gan, Chee Lip
Thompson, C. V.
Sasangka, W. A.
Keywords: AlGaN/GaN HEMTs
Leakage Current
Engineering::Materials
Issue Date: 2018
Source: Sasangka, W. A., Gao, Y., Gan, C. L., & Thompson, C. V. (2018). Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. Microelectronics Reliability, 88-90393-396. doi:10.1016/j.microrel.2018.06.048
Series/Report no.: Microelectronics Reliability
Abstract: We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a low gate-leakage current (good devices) are compared with ones that had a high gate-leakage current (bad devices). The apparent zero-bias Schottky barrier height of bad devices (0.4 < ϕB0 < 0.62 eV) was found to be lower than that of the good devices (ϕB0 = 0.79 eV). From transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) analysis, we found that this difference is due to the presence of carbon impurities in the nickel layer in the gate region.
URI: https://hdl.handle.net/10356/107592
http://hdl.handle.net/10220/50348
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2018.06.048
Rights: © 2018 Elsevier. All rights reserved. This paper was published in Microelectronics Reliability and is made available with permission of Elsevier.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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