Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90757
Title: Mathematical model of low-temperature wafer bonding under medium vacuum and its application
Authors: Yu, Weibo
Wei, Jun
Tan, Cher Ming
Huang, Guang Yu
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2005
Source: Yu, W., Wei, J., Tan, C. M., & Huang, G. Y. (2005). Mathematical model of low-temperature wafer bonding under medium vacuum and its application. IEEE Transactions on Advanced Packaging. 28(4), 650-658.
Series/Report no.: IEEE transactions on advanced packaging
Abstract: Low-temperature direct wafer bonding was successfully performed under medium vacuum level. A mathematical model was developed based on the qualitative understanding of the bonding mechanisms. The model combined the diffusion-reaction model of water in SiO2 and the diffusion theory in porous media. It is found that the model agrees well with the experimental data. This model can be applied to predict the effects of annealing time, annealing temperature, ambient vacuum, wafer orientation, and wafer dimension on the bond strength.
URI: https://hdl.handle.net/10356/90757
http://hdl.handle.net/10220/5336
ISSN: 1521-3323
DOI: http://dx.doi.org/10.1109/TADVP.2005.858306
Rights: © 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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