Accurate and scalable RF interconnect model for silicon-based RFIC applications
Sia, Choon Beng
Ong, Beng Hwee
Yeo, Kiat Seng
Do, Manh Anh
Date of Issue2005
School of Electrical and Electronic Engineering
A new figure of merit, intrinsic factor for interconnects, is proposed to provide insights as to how back-end metallization influences the performance of radio frequency integrated circuits. An accurate and scalable double-radio frequency interconnect model, continuous across physical dimensions of width and length, is presented to demonstrate reliable predictions of interconnect characteristics up to 10 GHz. Using this interconnect model in gigahertz amplifier and voltage-controlled oscillator circuit simulations yields excellent correlations between simulated and on-wafer measured circuit results.
DRNTU::Engineering::Electrical and electronic engineering
IEEE transactions on microwave theory and techniques
© 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.