Please use this identifier to cite or link to this item:
|Title:||Determination of material parameters from regions close to the collector using electron beam-induced current||Authors:||Wu, Dethau.
Ong, Vincent K. S.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2002||Source:||Wu, D., & Ong, V. K. S. (2002). Determination of material parameters from regions close to the collector using electron beam-induced current. IEEE Transactions on Electron Devices, 49(8), 1455-1461.||Series/Report no.:||IEEE transactions on electron devices||Abstract:||The conventional method of extracting the minority carrier diffusion length using the electron beam-induced current (EBIC) technique requires that the electron beam be placed at region more than two diffusion lengths away from the collector. The EBIC signals obtained under this condition usually has low signal to noise ratio. In addition, the true diffusion length of the sample is initially unknown and hence it is difficult to estimate how close the beam can be placed from the collector. To overcome all these difficulties, a new method of extracting minority carrier diffusion length from the EBIC signal is proposed. It is shown that this method can be applied to EBIC signals obtained from regions close to the collector. It is also shown that the surface recombination velocity of the sample can also be obtained using this method. This theory is verified using EBIC data generated from a device simulation software.||URI:||https://hdl.handle.net/10356/90975
|ISSN:||0018-9383||DOI:||http://dx.doi.org/10.1109/TED.2002.801297||Rights:||© 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
Files in This Item:
|Determination of material parameters from regions close to the collector using electron beam-induced current.pdf||Published version||300.71 kB||Adobe PDF|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.