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|Title:||The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers||Authors:||Goh, Wang Ling
Raza, S. H.
Montgomery, J. H.
Armstrong, B. M.
Gamble, H. S.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||1999||Source:||Goh, W. L., Raza, S. H., Montgomery, J. H., Armstrong, B. M., & Gamble, H. S. (1999). The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers. IEEE Electron Device Letters, 20(5), 212-214.||Series/Report no.:||IEEE electron device letters||Abstract:||Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current–voltage (IV ) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 µs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes.||URI:||https://hdl.handle.net/10356/99895
|ISSN:||0741-3106||DOI:||10.1109/55.761018||Rights:||IEEE Electron Device Letters © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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