Novel RF process monitoring test structure for silicon devices.
Sia, Choon Beng
Ong, Beng Hwee
Lim, Kok Meng
Yeo, Kiat Seng
Do, Manh Anh
Date of Issue2005
School of Electrical and Electronic Engineering
This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.
IEEE transactions on semiconductor manufacturing
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