dc.contributor.authorTan, Cher Ming
dc.contributor.authorZhang, Guan
dc.contributor.authorGan, Zhenghao
dc.date.accessioned2009-08-03T04:41:15Z
dc.date.available2009-08-03T04:41:15Z
dc.date.copyright2004en_US
dc.date.issued2004
dc.identifier.citationTan, C. M., Zhang, G., & Gan, Z. (2004). IEEE Transactions on Device and Materials Reliability. IEEE Transactions on Device and Materials Reliability, 4(3), 450-456.en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://hdl.handle.net/10220/6008
dc.description.abstractVarious physical mechanisms are involved in an electromigration (EM) process occurring in metal thin film. These mechanisms are electron-wind force induced migration, thermomigration due to temperature gradient, stressmigration due to stress gradient, and surface migration due to surface tension in the case where free surface is available. In this work, a finite element model combining all the aforementioned massflow processes was developed to study the behaviors of these physical mechanisms and their interactions in an EM process for both Al and Cu interconnects. The simulation results show that the intrinsic EM damage in Al is mainly driven by the electron-wind force, and thus the electron-wind force induced flux divergence is the dominant cause of Al EM failure. On the other hand, the intrinsic EM damage in Cu is driven initially by the thermomigration, and the electron-wind force dominates the EM failure only at a latter stage. This shows that the early stage of void growth in Cu interconnects is more prone to thermomigration than Al.en_US
dc.format.extent7 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE transactions on device and materials reliabilityen_US
dc.rightsIEEE Transactions on Device and Materials Reliability © 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleDynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnectsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/TDMR.2004.833228
dc.description.versionPublished versionen_US


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