Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy
Clark, Antony H.
Dawson, M. D.
Kim, K. S.
Park, Y. J.
Date of Issue2005
School of Physical and Mathematical Sciences
We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 mu m GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics. (c) 2005 American Institute of Physics.
DRNTU::Science::Physics::Optics and light
Applied physics letters
Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.