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|Title:||Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy||Authors:||Sun, Handong
Clark, Antony H.
Dawson, M. D.
Kim, K. S.
Park, Y. J.
|Keywords:||DRNTU::Science::Physics::Optics and light||Issue Date:||2005||Source:||Sun, H. D., Clark, A. H., Calvez, S., Dawson, M. D., Kim, K. S., Kim, T., et al. (2005). Effect of multi-layer barriers on the optical properties of GaInNAs single quantum-well structures grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 87(2).||Series/Report no.:||Applied physics letters||Abstract:||We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 mu m GaInNAs/GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE). While the emission wavelength of GaInNAs/GaAs quantum wells can be redshifted by the adoption of strain-compensated GaNAs layers, the material quality is degraded by the increased stress at the well/barrier interface. This detrimental effect can be cured by inserting a strain-mediating InGaAs layer between them. Contrary to what is expected, however, the emission wavelength is blueshifted by the insertion of the InGaAs layer, which is attributed to the reduced N incorporation due to the improved interface quality. Our results indicate that the optical properties of MOVPE-grown GaInNAs/GaAs quantum wells can be optimized in quantum efficiency and emission wavelength by combination of strain-compensating and strain-mediating layers with suitable characteristics. (c) 2005 American Institute of Physics.||URI:||https://hdl.handle.net/10356/91818
|ISSN:||0003-6951||DOI:||10.1063/1.1993758.||Rights:||Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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