Selective modification of band gap in GaInNAs/GaAs structures by quantum well intermixing
Dawson, M. D.
Bryce, A. C.
Marsh, J. H.
Date of Issue2003
School of Physical and Mathematical Sciences
We report an investigation of selective quantum-well intermixing (QWI) in 1.3-mum GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled shifts of band gap at room temperature of over 200 nm have been observed in sputtered SiO2-capped samples, while uncapped and SiO2-capped samples by plasma-enhanced chemical vapor deposition demonstrated negligible shift. This selective modification of the band gap in GaInNAs quantum wells has been confirmed by detailed photoluminescence and photoluminescence excitation spectroscopy, and by secondary ion mass spectrometry. The controlled tuning of the band gap of GaInNAs/GaAs by QWI is important for a wide range of photonic integrated circuits and advanced device applications.
DRNTU::Science::Physics::Optics and light
Applied Physics Letters.
Applied Physics Letters © copyright 2003 American Institute of Physics. The journal's website is located at http://apl.aip.org/.