Spectroscopic characterization of 1.3 μm GaInNAs quantum well structures grown by metal-organical vapour phase epm,itaxy
Clark, Antony H.
Dawson, M. D.
Qiu, Y. N.
Rorison, J. M.
Kim, K. S.
Park, Y. J.
Date of Issue2005
School of Physical and Mathematical Sciences
We report optical studies of high-quality 1.3 μm strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation sPLEd spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum.
DRNTU::Science::Physics::Optics and light
Applied Physics Letters.
Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.