Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents
Clark, Antony H.
Dawson, M. D.
Shih, D. K.
Lin, H. H.
Date of Issue2005
School of Physical and Mathematical Sciences
We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.
DRNTU::Science::Physics::Optics and light
Applied Physics Letters.
Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/.