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|Title:||Quantum well intermixing in GaInNAs/GaAs structures||Authors:||Sun, Handong
Dawson, M. D.
Bryce, A. C.
Marsh, J. H.
Nam, K. B.
Lin, J. Y.
Jiang, H. X.
|Keywords:||DRNTU::Science::Physics::Optics and light||Issue Date:||2003||Source:||Sun, H. D., Macaluso, R., Calvez, S., Dawson, M. D., Robert, F., Bryce, A. C., et al. (2003). Quantum well intermixing in GaInNAs/GaAs structures. Journal of Applied Physics, 94(12), 7581-7585.||Series/Report no.:||Journal of Applied Physics.||Abstract:||We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in-situ to the stage of blueshift saturation. The different effects of two capping layer deposition techniques on the interdiffusion of In-Ga have been compared, particular regarding the role of sputtering processes. The dependence of quantum well intermixing-induced photoluminescence blueshift on N concentration has provided extra information on the intrinsic properties of the GaInNAs/GaAs material system. We found that the blueshift decreases as the N concentration increases. This finding not only rules out the possible mechanism of N-As interdiffusion, but also demonstrates the alloy stability of GaInNAs due to the strong bond between In-N.||URI:||https://hdl.handle.net/10356/91816
|ISSN:||0021-8979||DOI:||10.1063/1.1627950||Rights:||Journal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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