dc.contributor.authorSun, Handong
dc.contributor.authorMacaluso, Roberto
dc.contributor.authorDawson, M. D.
dc.contributor.authorRobert, F.
dc.contributor.authorBryce, A. C.
dc.contributor.authorMarsh, J. H.
dc.contributor.authorRiechert, H.
dc.date.accessioned2009-08-12T03:52:32Z
dc.date.available2009-08-12T03:52:32Z
dc.date.copyright2003en_US
dc.date.issued2003
dc.identifier.citationSun, H.D., Macaluso, R., Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., et al. (2003). Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures. Journal of Applied Physics, 94(3), 1550-1556.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/6063
dc.description.abstractRapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples.en_US
dc.format.extent7 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rightsJournal of Applied Physics © copyright 2003 American Institute of Physics. The journal's website is located at http://jap.aip.org/.en_US
dc.subjectDRNTU::Science::Physics::Optics and light
dc.titleCharacterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structuresen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.openurlhttp://sfxna09.hosted.exlibrisgroup.com:3410/ntu/sfxlcl3?sid=metalib:EBSCO_APH&id=doi:&genre=&isbn=&issn=00218979&date=2003&volume=94&issue=3&spage=1550&epage=&aulast=Sun&aufirst=%20H%20%20D&auinit=&title=Journal%20of%20Applied%20Physics&atitle=Characterization%20of%20selective%20quantum%20well%20intermixing%20in%201%2E3%20%26mu%3Bm%20GaInNAs%2FGaAs%20structures%2E&sici.
dc.identifier.doihttp://dx.doi.org/10.1063/1.1590413
dc.description.versionPublished versionen_US


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