dc.contributor.authorSun, Handong
dc.contributor.authorDawson, M. D.
dc.contributor.authorOthman, M.
dc.contributor.authorYong, J. C. L.
dc.contributor.authorRorison, J. M.
dc.contributor.authorGilet, P.
dc.contributor.authorGrenouillet, L.
dc.contributor.authorMillion, A.
dc.identifier.citationSun, H. D., Dawson, M. D., Othman, M., Yong, J. C. L., & Rorison, J. M., et al.(2003). Optical transitions in GaInNAs/GaAs multiquantum wells with various N contents investigated by photoluminescence excitation spectroscopy. Applied Physics Letters., 82(3), 376-378.
dc.description.abstractWe report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, systematic studies have been performed on a series of samples with nitrogen concentrations in the range 0%–1.14%. The observed data were compared with theoretical fitting based on the band anticrossing model in which the localized N states interact with the extended states in the conduction band, taking strain effects into account. Our results are consistent with the band anticrossing model, but with differing coupling strength between different quantum states of electrons in the quantum wells.en_US
dc.format.extent4 p.en_US
dc.relation.ispartofseriesApplied Physics Letters.en_US
dc.rightsApplied Physics Letters © copywrite 2003 American Institute of Physics. The journal's website is located at http://apl.aip.org/.en_US
dc.titleOptical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopyen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.description.versionPublished versionen_US

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