dc.contributor.authorTong, Ah Fatt
dc.contributor.authorLim, Wei Meng
dc.contributor.authorYeo, Kiat Seng
dc.contributor.authorSia, Choon Beng
dc.contributor.authorZhou, Wen Cong
dc.date.accessioned2010-05-04T00:50:43Z
dc.date.available2010-05-04T00:50:43Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.citationTong, A. F., Lim, W. M., Yeo, K. S., Sia, C. B., & Zhou, W. C. (2009). Scalable RFCMOS Noise Model. IEEE Transactions On Microwave Theory And Techniques. 57(5), 1009-1019.en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://hdl.handle.net/10220/6245
dc.description.abstractThis paper presents the high-frequency (HF) noise modeling of an RF MOSFET for a 90-nm technology node. A brief discussion on the noise measurement theory is presented to illustrate the limitation of the noise measurement system. The extracted noise sources were studied for their geometry and biasing dependences and by implementing additional noise sources into the small-signal RFCMOS model, accurate HF noise simulation for the transistor can be achieved. Verilog-A is used for the coding of the additional noise sources into the RFCMOS model and the added noise source will compensate the underestimation of the channel thermal noise from the BSIM3v3 core model. Simulated noise circles and the measured noise figures are plotted at other source impedances to show that all the noise parameters are simulated accurately. The biasing and geometry dependences of the measured and simulated noise parameters are presented to demonstrate the scalability of the developed HF noise model. The scalability feature in HF noise model can be implemented into the process design kit (PDK) so that more powerful PDK can be developed for the circuit designers to optimize and simulate their circuit design that requires stringent noise specifications. The accurate noise simulation can ensure better chance of success and reduce the number of tape-out and design cycle time.en_US
dc.format.extent11 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE transactions on microwave theory and techniquesen_US
dc.rights© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleA scalable RFCMOS noise modelen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/TMTT.2009.2017245
dc.description.versionPublished versionen_US


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