dc.contributor.authorTan, Cher Ming
dc.contributor.authorRaghavan, Nagarajan
dc.contributor.authorSun, Lina
dc.contributor.authorHsu, Chuck
dc.contributor.authorWang, Chase
dc.date.accessioned2010-06-04T07:08:55Z
dc.date.available2010-06-04T07:08:55Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.citationTan, C. M., Raghavan, N., Sun, L., Hsu, C., & Wang, C. (2009). Comparative study of non-standard power diodes. IEEE Conference on Industrial Electronics and Applications (4th:2009:Xian,China)
dc.identifier.urihttp://hdl.handle.net/10220/6291
dc.description.abstractVarious non-standard power diode structures have been proposed which are superior in performance in comparison to the standard power diode. However, each of these structures help optimize certain electrical parameters with corresponding trade-offs for others. In this work, the electrical parameters of three non-standard diode structures viz. SPEED diode, BUFFER diode and CLC (Carrier Lifetime Control) diode are evaluated in comparison to those of the conventional P+NN+ standard diode. A Design of Experiment (DOE) combined with extensive MEDICI simulation is performed, followed by Response Surface Methodology (RSM) to empirically relate the electrical parameters with the diode structural and doping parameters. A global optimization algorithm, known as Simulated Annealing (SA) is used to optimize each individual electrical parameter. Sensitivity analysis for the mized electrical parameter is also performed to study the effects of inherent process variations on the device electrical parameters, indicating the manufacturability of the non-standard power diodes.en_US
dc.format.extent8 p.en_US
dc.language.isoenen_US
dc.rights© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering
dc.titleComparative study of non-standard power diodesen_US
dc.typeConference Paper
dc.contributor.conferenceIEEE Conference on Industrial Electronics and Applications (4th : 2009 : Xi'an, China)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/ICIEA.2009.5138815
dc.description.versionPublished versionen_US


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