Computation of charge collection probability for any collecting junction shape
Author
Kurniawan, Oka
Ong, Vincent K. S.
Tan, Chee Chin
Li, Erping
Date of Issue
2009Conference Name
IEEE International Symposium on Integrated Circuits (12th : 2009 : Singapore)
School
School of Electrical and Electronic Engineering
Related Organization
Institute of High Performance Computing A*STAR
Version
Published version
Abstract
Electron-beam-induced current (EBIC) of the
scanning electron microscope (SEM) has been widely used for
semiconductor devices and materials characterizations. The
charge collection probability within a collecting junction plays an
important role in determining the EBIC current. The
conventional approach starts by solving the continuity equation
to obtain the charge carrier density and then the analytical
expression for the charge collection probability. Knowing the
analytical expression of the charge collection probability
enhances the study and development of the measurement
technique. However, the conventional method usually requires
lot of mathematical effort and the derived analytical expression is
valid only for one particular junction shape. This paper presents
a simple and straight forward computational method for the
charge collection probability distribution within the charge
collecting junction well by utilizing the reciprocity theorem and
finite difference method with the junction shape serves as the
boundary conditions. It not only simplifies the computation but
also applicable to any junction shape as long as the drift-diffusion
model remains valid. This method was verified using a U-shaped
junction well.
Subject
DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Type
Conference Paper
Rights
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