dc.contributor.authorChen, Shoushun
dc.contributor.authorFarid, Boussaid
dc.contributor.authorAmine, Bermak
dc.date.accessioned2010-08-20T05:54:25Z
dc.date.available2010-08-20T05:54:25Z
dc.date.copyright2008en_US
dc.date.issued2008
dc.identifier.citationChen, S. S., Farid, B., & Amine, B. (2008). Robust intermediate read-out for deep submicron technology CMOS image sensors. IEEE Sensors Journal, 8(3), 286-294.
dc.identifier.issn1530-437Xen_US
dc.identifier.urihttp://hdl.handle.net/10220/6335
dc.description.abstractIn this paper, a CMOS image sensor featuring a novel spiking pixel design and a robust digital intermediate read-out is proposed for deep submicron CMOS technologies. The proposed read-out scheme exhibits a relative insensitivity to the ongoing aggressive scaling of the supply voltage. It is based on a novel compact spiking pixel circuit, which combines digitizing and memory functions. Illumination is encoded into a Gray code using a very simple yet robust Gray 8-bit counter memory. Circuit simulations and experiments demonstrate the successful operation of a 64 64 image sensor, implemented in a 0.35 m CMOS technology. A scalability analysis is presented. It suggests that deep sub-0.18 m will enable the full potential of the proposed Gray encoding spiking pixel. Potential applications include multiresolution imaging and motion detection.en_US
dc.format.extent9 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesIEEE sensors journalen_US
dc.rights© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic systems
dc.titleRobust intermediate read-out for deep submicron technology CMOS image sensorsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/JSEN.2007.912783
dc.description.versionPublished versionen_US


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