Design of SPST/SPDT switches in 65nm CMOS for 60GHz applications
Date of Issue
2008Conference Name
Asia Pacific Microwave Conference (2008 : Hong Kong, China)
School
School of Electrical and Electronic Engineering
Version
Published version
Abstract
This paper presents novel single-pole-single-throw (SPST) and single-pole-double-throw
(SPDT) switches for 57-66GHz band applications. At 60GHz band, the SPST switch exhibits
an insertion loss of 1.6dB, a return loss of 16dB, an isolation of 27dB and an input 1-dB
compression point (IP1dB) of 11dBm; Correspondingly, the SPDT switch achieves an
insertion loss of 3dB/2.5dB, a return loss of 12.5dB/12dB, an isolation of 22dB/22dB and an
input P1dB of 12dBm/13dBm in the Tx/Rx mode, respectively. The switches are designed and
implemented with STMicroelectronics 1.2V 65nm CMOS RF process.
Subject
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Type
Conference Paper
Rights
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Collections
http://dx.doi.org/10.1109/APMC.2008.4958340
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