dc.contributor.authorOng, Shih Ni
dc.contributor.authorYeo, Kiat Seng
dc.contributor.authorChan, Lye Hock
dc.contributor.authorLoo, Xi Sung
dc.contributor.authorBoon, Chirn Chye
dc.contributor.authorDo, Manh Anh
dc.contributor.authorChew, Kok Wai Johnny
dc.date.accessioned2010-08-24T08:36:10Z
dc.date.available2010-08-24T08:36:10Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.citationOng, S. N., Yeo, K. S., Chan, L. H., Loo, X. S., Boon, C. C., Do, M. A., et al. (2009). A new unified model for channel thermal noise of deep sub-micron RFCMOS. IEEE International Symposium on Radio-Frequency Integration Technology, Singapore, 280-283.
dc.identifier.urihttp://hdl.handle.net/10220/6349
dc.description.abstractA new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13μm RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.en_US
dc.format.extent4 p.en_US
dc.language.isoenen_US
dc.rights© 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
dc.titleA new unified model for channel thermal noise of deep sub-micron RFCMOSen_US
dc.typeConference Paper
dc.contributor.conferenceIEEE International Symposium on Radio-Frequency Integration Technology (2009 : Singapore)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/RFIT.2009.5383701
dc.description.versionPublished versionen_US
dc.contributor.organizationChartered Semiconductor Manufacturing Ltden_US


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