Charging effect of Al2O3 thin films containing Al nanocrystals
Cen, Zhan Hong
Wong, Jen It
Chen, X. B.
Fung, Stevenson Hon Yuen
Date of Issue2008
School of Electrical and Electronic Engineering
In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al.
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Applied physics letters
Applied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v93/i14/p142106_s1?isAuthorized=no