dc.contributor.authorLiu, Yang
dc.contributor.authorChen, Tupei
dc.contributor.authorZhu, Wei
dc.contributor.authorYang, Ming
dc.contributor.authorCen, Zhan Hong
dc.contributor.authorWong, Jen It
dc.contributor.authorLi, Yibin
dc.contributor.authorZhang, Sam
dc.contributor.authorChen, X. B.
dc.contributor.authorFung, Stevenson Hon Yuen
dc.date.accessioned2010-08-25T01:31:07Z
dc.date.available2010-08-25T01:31:07Z
dc.date.copyright2008en_US
dc.date.issued2008
dc.identifier.citationLiu, Y., Chen, T., Zhu, W., Yang, M., Cen, Z. H., Wong, J. I., et al. (2008). Charging effect of Al2O3 thin films containing Al nanocrystals. Applied Physics Letters, 93, 1-3.
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10220/6351
dc.description.abstractIn this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al.en_US
dc.format.extent4 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rightsApplied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v93/i14/p142106_s1?isAuthorized=noen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.titleCharging effect of Al2O3 thin films containing Al nanocrystalsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.2994695
dc.description.versionPublished versionen_US


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