Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90699
Title: Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation
Authors: Yang, Ming
Chen, Tupei
Wong, Jen It
Ng, Chi Yung
Liu, Yang
Ding, Liang
Fung, Stevenson Hon Yuen
Trigg, Alastair David
Tung, Chih Hang
Li, Chang Ming
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
DRNTU::Engineering::Chemical engineering::Biochemical engineering
Issue Date: 2007
Source: Yang, M., Chen, T., Wong, J. I., Ng, C. Y., Liu, Y., Ding, L., et al. (2007). Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation. Journal of Applied Physics, 101, 1-5.
Series/Report no.: Journal of applied physics
Abstract: A layer of Ge nanocrystals (nc-Ge) distributed in the gate oxide near the gate of a metal-oxide-semiconductor structure is synthesized with low-energy Ge ion implantation followed by thermal annealing at 800  degrees celsius. The behaviors of charge trapping and charge retention in the nc-Ge have been studied. For a positive charging voltage, only electron trapping occurs, and the trapped electrons show a long retention time. However, for a negative charging voltage, both the hole trapping and electron trapping occur simultaneously, and the hole trapping is dominant if the magnitude of the charging voltage is small or the charging time is short. Due to the relatively easier loss of the trapped holes, the net charge trapping in the nc-Ge exhibits a continuous shift toward a more negative value with the waiting time.
URI: https://hdl.handle.net/10356/90699
http://hdl.handle.net/10220/6352
ISSN: 0021-8979
DOI: 10.1063/1.2749470
Rights: Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i12/p124313_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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