dc.contributor.authorZhao, P.
dc.contributor.authorLiu, Yang
dc.contributor.authorChen, Tupei
dc.contributor.authorZhang, Sam
dc.contributor.authorFu, Yong Qing
dc.contributor.authorFung, Stevenson Hon Yuen
dc.identifier.citationZhao, P., Liu, Y., Chen, T. P., Zhang, S., Fu, Y. Q., & Fung, S. H. Y. (2005). Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering. Applied Physics Letters 87, 1-3.
dc.description.abstractAl-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and Nitrogen gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulator-semiconductor structure with a 60 nm Al-rich AlN thin film, a voltage of −15 V applied to the metal electrode for 10^−6 s causes a flatband voltage shift of ∼ 1.5 V. Both electron trapping and hole trapping are possible, depending on the polarity of the applied voltage. In addition, whether the electron trapping or the hole trapping is the dominant process also depends on the charging time and the magnitude of the voltage. The Al-rich AlN thin films provide the possibility of memory applications with low cost.en_US
dc.format.extent3 p.en_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rightsApplied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i3/p033112_s1?isAuthorized=noen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductors
dc.titleMemory effect of Al-rich AlN films synthesized with rf magnetron sputteringen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.versionPublished versionen_US

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