Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91319
Title: Optical properties of silicon nanocrystals embedded in a SiO2 matrix
Authors: Ding, Liang
Chen, Tupei
Liu, Yang
Ng, Chi Yung
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2005
Source: Ding, L., Chen, T. P., Liu, Y., Ng, C. Y., & Fung, S. H. Y. (2005). Optical properties of silicon nanocrystals embedded in a SiO2 matrix. Physical Review B 72, 1-7.
Series/Report no.: Physical review B
Abstract: Optical properties of isolated silicon nanocrystals (nc-Si) with a mean size of ∼4 nm embedded in a SiO2 matrix that was synthesized with an ion beam technique have been determined with spectroscopic ellipsometry in the photon energy range of 1.1–5.0 eV. The optical properties of the nc-Si are found to be well described by both the Lorentz oscillator model and the Forouhi-Bloomer (FB) model. The nc-Si exhibits a significant reduction in the dielectric functions and optical constants and a large blueshift (∼0.6 eV) in the absorption spectrum as compared with bulk crystalline silicon. The band gap of the nc-Si obtained from the FB model is ∼1.7 eV, showing a large band gap expansion of ∼0.6 eV relative to the bulk value. The band gap expansion is in very good agreement with the first-principles calculation of the nc-Si optical gap based on quantum confinement.
URI: https://hdl.handle.net/10356/91319
http://hdl.handle.net/10220/6358
ISSN: 1098-0121
DOI: http://dx.doi.org/10.1103/PhysRevB.72.125419
Rights: Physical Review B © copyright 2005 American Physical Society. The journal's website is located at http://link.aps.org/doi/10.1103/PhysRevB.72.125419
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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