Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/99901
Title: Going green for discrete power diode manufacturers
Authors: Tan, Cher Ming
Sun, Lina
Wang, Chase
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Issue Date: 2009
Source: Tan, C. M., Sun, L., & Wang, C. (2009). Going green for discrete power diode manufacturers. In proceedings of the 4th IEEE Conference on Industrial Electronics and Applications: Xian, China, (pp.3303-3306).
Abstract: Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 degree celcius and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400 degrees celcius and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics.
URI: https://hdl.handle.net/10356/99901
http://hdl.handle.net/10220/6360
DOI: 10.1109/ICIEA.2009.5138814
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Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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