dc.contributor.authorLim, Chee Chong
dc.contributor.authorYeo, Kiat Seng
dc.contributor.authorChew, Kok Wai Johnny
dc.contributor.authorLim, Suh Fei
dc.contributor.authorBoon, Chirn Chye
dc.contributor.authorQiu, Ping
dc.contributor.authorDo, Manh Anh
dc.contributor.authorChan, Lap
dc.date.accessioned2010-08-31T06:07:39Z
dc.date.available2010-08-31T06:07:39Z
dc.date.copyright2008en_US
dc.date.issued2008
dc.identifier.citationLim, C. C., Yeo K. S., Chew, K. W., Lim, S. F., Boon, C. C., Qiu, P., et al. (2008). An area efficient high turn ratio monolithic transformer for silicon RFIC. IEEE Radio Frequency Integrated Circuits Symposium: Atlanta,GA,USA, (pp.167-170).
dc.identifier.urihttp://hdl.handle.net/10220/6381
dc.description.abstractA novel way of manufacturing an on-chip transformer that produces high inductance ratio (LSec/LPri > 30) with excellent area efficiency is presented. This technique uses an electrical all-round coupling effect of a conductor A (Primary Coil), having large effective width, and a densely routed conductor B (Secondary Coil). Thus, a high turn ratio monolithic transformer, using minimum die size, is realizable on silicon. The coil having the dense routing can also be doubled up as a monolithic RF choke on silicon. In this work, area efficiency is compared between various type of existing transformer structures (i.e. Interleaved and Stacked transformer), based on unit inductance. The method presented is fully compatible to all the foundry standard CMOS processes.en_US
dc.format.extent4 p.en_US
dc.language.isoenen_US
dc.rights© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
dc.titleAn area efficient high turn ratio monolithic transformer for silicon RFICen_US
dc.typeConference Paper
dc.contributor.conferenceIEEE Radio Frequency Integrated Circuits Symposium (2008 : Atlanta, Georgia, US)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1109/RFIC.2008.4561410
dc.description.versionPublished versionen_US
dc.contributor.organizationChartered Semiconductor Manufacturing Ltden_US


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