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https://hdl.handle.net/10356/90755| Title: | Requirement for accurate interconnect temperature measurement for electromigration test | Authors: | Hou, Yuejin Tan, Cher Ming |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Electronic systems | Issue Date: | 2009 | Source: | Hou, Y., & Tan, C. M. (2009). Requirement for accurate interconnect temperature measurement for electromigration test. In proceedings of the 12th International Symposium on Integrated Circuits: Singapore, (pp.522-525). | Abstract: | In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect temperature variations are derived analytically and illustrated in Cu/low-k interconnects using finite element analysis (FEA) under typical experimental conditions. The derived formulations are verified by our previous experimental works. | URI: | https://hdl.handle.net/10356/90755 http://hdl.handle.net/10220/6394 |
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| Appears in Collections: | EEE Conference Papers |
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| Requirement for accurate interconnect temperature measurement for Electromigration test.pdf | 488.61 kB | Adobe PDF |  View/Open |
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