Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90755
Title: Requirement for accurate interconnect temperature measurement for electromigration test
Authors: Hou, Yuejin
Tan, Cher Ming
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Issue Date: 2009
Source: Hou, Y., & Tan, C. M. (2009). Requirement for accurate interconnect temperature measurement for electromigration test. In proceedings of the 12th International Symposium on Integrated Circuits: Singapore, (pp.522-525).
Abstract: In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect temperature variations are derived analytically and illustrated in Cu/low-k interconnects using finite element analysis (FEA) under typical experimental conditions. The derived formulations are verified by our previous experimental works.
URI: https://hdl.handle.net/10356/90755
http://hdl.handle.net/10220/6394
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Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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