Requirement for accurate interconnect temperature measurement for electromigration test
Date of Issue
2009Conference Name
IEEE International Symposium on Integrated Circuits (12th : 2009 : Singapore)
School
School of Electrical and Electronic Engineering
Version
Published version
Abstract
In this work, we show accurate temperature
measurement is important in electromigration (EM) test as it can
affect the measured activation energy EA and current density
exponent n. The deviation of measured EA and n due to the
interconnect temperature variations are derived analytically and
illustrated in Cu/low-k interconnects using finite element analysis
(FEA) under typical experimental conditions. The derived
formulations are verified by our previous experimental works.
Subject
DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
Type
Conference Paper
Rights
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