Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence
Xu, C. D.
Dong, Jian Rong
Date of Issue2007
School of Electrical and Electronic Engineering
Institute of Materials Research and Engineering
Diffusion lengths of the group III and V sublattices are quantitatively determined for intermixing of a quaternary InGaAs/InP quantum well using polarized edge-emitting photoluminescence. Diffusion-length loci are plotted on a contour diagram of wavelength shifts of electron-heavy-hole and electron-light-hole transitions and illustrate the time progression of intermixing clearly. The plasma-enhanced intermixing effect is investigated using this technique, showing the difference of intermixing development in the early and the late stages. It is seen that the calculated diffusion-length ratio may change with the annealing duration.
DRNTU::Engineering::Electrical and electronic engineering
Applied physics letters
Applied Physics Letters © copyright 2007 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v90/i19/p191111_s1?isAuthorized=no