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|Title:||Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence||Authors:||Xu, C. D.
Dong, Jian Rong
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2007||Source:||Xu, C. D., Mei, T., & Dong J. R. (2007). Determination of diffusion lengths for intermixed quaternary quantum well with polarized edge-emitting photoluminescence. Applied Physics Letters, 90, 1-3.||Series/Report no.:||Applied physics letters||Abstract:||Diffusion lengths of the group III and V sublattices are quantitatively determined for intermixing of a quaternary InGaAs/InP quantum well using polarized edge-emitting photoluminescence. Diffusion-length loci are plotted on a contour diagram of wavelength shifts of electron-heavy-hole and electron-light-hole transitions and illustrate the time progression of intermixing clearly. The plasma-enhanced intermixing effect is investigated using this technique, showing the difference of intermixing development in the early and the late stages. It is seen that the calculated diffusion-length ratio may change with the annealing duration.||URI:||https://hdl.handle.net/10356/91355
|ISSN:||0003-6951||DOI:||http://dx.doi.org/10.1063/1.2737125||Rights:||Applied Physics Letters © copyright 2007 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v90/i19/p191111_s1?isAuthorized=no||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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