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      Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix

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      Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix.pdf (77.40Kb)
      Author
      Ding, Liang
      Chen, Tupei
      Liu, Yang
      Ng, Chi Yung
      Liu, Yu Chan
      Fung, Stevenson Hon Yuen
      Date of Issue
      2005
      School
      School of Electrical and Electronic Engineering
      Related Organization
      Singapore Institute of Manufacturing Technology
      Version
      Published version
      Abstract
      The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also.
      Subject
      DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
      Type
      Journal Article
      Series/Journal Title
      Applied physics letters
      Rights
      Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i12/p121903_s1?isAuthorized=no
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      http://dx.doi.org/10.1063/1.2051807
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