Thermal annealing effect on the band gap and dielectric functions of silicon nanocrystals embedded in SiO2 matrix
Author
Ding, Liang
Chen, Tupei
Liu, Yang
Ng, Chi Yung
Liu, Yu Chan
Fung, Stevenson Hon Yuen
Date of Issue
2005School
School of Electrical and Electronic Engineering
Related Organization
Singapore Institute of Manufacturing Technology
Version
Published version
Abstract
The thermal annealing effect on band gap and dielectric functions of silicon nanocrystals (nc-Si) embedded in a SiO2 matrix synthesized by Si ion implantation is investigated by spectroscopic ellipsometry. A large band-gap expansion of nc-Si relative to bulk crystalline silicon has been observed. The band gap of the nc-Si for the nonannealing condition (i.e., as implanted) is 1.78 eV while it is 1.72 eV for the annealing at 1000 °C for 100 min. The slight decrease in the band gap is attributed to the slight increase in the nc-Si size with annealing. The dielectric functions of nc-Si show a significant suppression, as compared to bulk crystalline silicon, due to the quantum size effect. Annealing results in a small change in the static dielectric constant, which can be explained in terms of the size effect also.
Subject
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Type
Journal Article
Series/Journal Title
Applied physics letters
Rights
Applied Physics Letters © copyright 2005 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v87/i12/p121903_s1?isAuthorized=no
Collections
http://dx.doi.org/10.1063/1.2051807
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