Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma
Zhang, X. H.
Djie, Hery Susanto
Ooi, Boon Siew
Date of Issue2006
School of Electrical and Electronic Engineering
Institute of Materials Research and Engineering
The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability. The time-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Applied physics letters
Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i25/p251102_s1?isAuthorized=no