Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91847
Title: Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma
Authors: Zhang, X. H.
Nie, Dong
Mei, Ting
Djie, Hery Susanto
Ooi, Boon Siew
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2006
Source: Zhang, X. H., Nie, D., Mei, T., Djie, H. S., & Ooi, B. S. (2006). Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma. Applied Physics Letters, 88, 1-3.
Series/Report no.: Applied physics letters
Abstract: The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability. The time-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions.
URI: https://hdl.handle.net/10356/91847
http://hdl.handle.net/10220/6407
ISSN: 0003-6951
DOI: 10.1063/1.2215602
Rights: Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i25/p251102_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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