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|Title:||Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma||Authors:||Zhang, X. H.
Djie, Hery Susanto
Ooi, Boon Siew
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials||Issue Date:||2006||Source:||Zhang, X. H., Nie, D., Mei, T., Djie, H. S., & Ooi, B. S. (2006). Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma. Applied Physics Letters, 88, 1-3.||Series/Report no.:||Applied physics letters||Abstract:||The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability. The time-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions.||URI:||https://hdl.handle.net/10356/91847
|ISSN:||0003-6951||DOI:||10.1063/1.2215602||Rights:||Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v88/i25/p251102_s1?isAuthorized=no||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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