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|Title:||Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide||Authors:||Li, S.
Ng, Chi Yung
Tse, Man Siu
Fung, Stevenson Hon Yuen
Liu, Yu Chan
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics||Issue Date:||2004||Source:||Li, S., Zhao, P., Liu, Y., Chen, T. P., Ng, C. Y., Tse, M. S., et al. (2004). Charging effect on electrical characteristics of MOS structures with Si nanocrystal distribution in gate oxide. Electrochemical and Solid State Letters, 7, G134-G137.||Series/Report no.:||Electrochemical and solid state letters||Abstract:||We report a study of influence of charging and discharging in Si nanocrystals (nc-Si), which are embedded throughout the gate oxide in metal-oxide-semiconductor (MOS) structures, on the current voltage and capacitance-voltage characteristics of the MOS structures. Very large current and capacitance are observed for the as-fabricated structures. However, charge trapping in the nanocrystals can reduce both the current and the capacitance dramatically. The trapped charges can also tunnel out from the nc-Si, leading to the recovery of both the current and the capacitance. The current reduction is attributed to the breaking of the nc-Si the change of the nc-Si capacitance as a result of the charge trapping.||URI:||https://hdl.handle.net/10356/92081
|ISSN:||1099-0062||DOI:||http://dx.doi.org/10.1149/1.1736593||Rights:||Electrochemical and Solid State Letters © copyright 2004 Electrochemical Society. The journal's website is located at http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF600000700000700G134000001&idtype=cvips&gifs=yes&ref=no||metadata.item.grantfulltext:||open||metadata.item.fulltext:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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