Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing
Xu, C. D.
Dong, Jian Rong
Date of Issue2006
School of Electrical and Electronic Engineering
A*STAR Institute of Materials Research and Engineering
Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Applied physics letters
Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i13/p131103_s1?isAuthorized=no