Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/92080
Title: Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing
Authors: Xu, C. D.
Mei, Ting
Nie, Dong
Dong, Jian Rong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2006
Source: Xu, C. D., Mei, T., Nie, D., & Dong J. R. (2006). Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing. Applied Physics Letters, 89, 1-3.
Series/Report no.: Applied physics letters
Abstract: Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600  degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.
URI: https://hdl.handle.net/10356/92080
http://hdl.handle.net/10220/6409
ISSN: 0003-6951
DOI: http://dx.doi.org/10.1063/1.2357563
Rights: Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i13/p131103_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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