Please use this identifier to cite or link to this item:
|Title:||Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing||Authors:||Xu, C. D.
Dong, Jian Rong
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials||Issue Date:||2006||Source:||Xu, C. D., Mei, T., Nie, D., & Dong J. R. (2006). Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing. Applied Physics Letters, 89, 1-3.||Series/Report no.:||Applied physics letters||Abstract:||Inductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600 degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.||URI:||https://hdl.handle.net/10356/92080
|ISSN:||0003-6951||DOI:||http://dx.doi.org/10.1063/1.2357563||Rights:||Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i13/p131103_s1?isAuthorized=no||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
Files in This Item:
|Halftoning band gap of InAs InP quantum dots using inductively coupled argon plasma-enhanced intermixing.pdf||237.66 kB||Adobe PDF|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.