dc.contributor.authorXu, C. D.
dc.contributor.authorMei, Ting
dc.contributor.authorNie, Dong
dc.contributor.authorDong, Jian Rong
dc.date.accessioned2010-09-06T04:01:29Z
dc.date.available2010-09-06T04:01:29Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationXu, C. D., Mei, T., Nie, D., & Dong J. R. (2006). Halftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixing. Applied Physics Letters, 89, 1-3.
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10220/6409
dc.description.abstractInductively coupled argon plasma-enhanced intermixing of InAs/InP quantum dots grown on InP substrate is investigated. Intermixing is promoted by the near-surface defects generated by plasma exposure in annealing at a temperature of 600  degrees celcius for 30 s. The annealing results in a maximum differential band-gap blueshift of 106 nm but a thermal shift of only 10 nm. Band-gap halftones are obtained by controlling the amount of near-surface defects via wet chemical etching on the plasma-exposed InP cap layer. No degradation of quantum-dot crystal quality due to the process has been observed as evidenced by photoluminescence intensity.en_US
dc.format.extent3 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesApplied physics lettersen_US
dc.rightsApplied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i13/p131103_s1?isAuthorized=noen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
dc.titleHalftoning band gap of InAs/InP quantum dots using inductively coupled argon plasma-enhanced intermixingen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.2357563
dc.description.versionPublished versionen_US
dc.contributor.organizationA*STAR Institute of Materials Research and Engineering


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