Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101362
Title: Visualizing charge transport in silicon nanocrystals embedded in SiO2 films with electrostatic force microscopy
Authors: Lau, Hon Wu
Ng, Chi Yung
Liu, Yang
Tse, Man Siu
Lim, Vanissa Sei Wei
Tan, Ooi Kiang
Chen, Tupei
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2004
Source: Lau, H. W., Ng, C. Y., Liu, Y., Tse, M. S., Lim, V. S. W., Tan, O. K., et al. (2004). Visualizing charge transport in silicon nanocrystals embedded in SiO2 films with electrostatic force microscopy. Applied physics letters, 85(14), 2941-2943.
Series/Report no.: Applied physics letters
Abstract: In this work, we report a mapping of charge transport in silicon nanocrystals (nc-Si) embedded in SiO2 dielectric films with electrostatic force microscopy. The charge diffusion from chargednc-Si to neighboring uncharged nc-Si in the SiO2 matrix is found to be the dominant mechanism for the decay of the trapped charge in the nc-Si. The trapped charge and the charge decay have been determined quantitatively from the electrical force measurement. An increase in the area of the charge cloud due to the charge diffusion has been observed clearly. In addition, the blockage and acceleration of charge diffusion by the neighboring charges with the same and opposite charge signs (i.e., positive or negative), respectively, have been observed.
URI: https://hdl.handle.net/10356/101362
http://hdl.handle.net/10220/6414
ISSN: 0003-6951
DOI: http://dx.doi.org/10.1063/1.1801675
Rights: Applied Physics Letters © copyright 2004 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v85/i14/p2941_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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