Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90763
Title: Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures
Authors: Tseng, Ampere A.
Liu, Yang
Chen, Tupei
Ng, Chi Yung
Ding, Liang
Tse, Man Siu
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2006
Source: Tseng, A. A., Liu, Y., Chen, T. P., Ng, C. Y., Ding, L., Tse, M. S., et al. (2006). Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures. IEEE Transactions on Electron Devices, 53(4), 914-917.
Series/Report no.: IEEE transactions on electron devices
Abstract: In this brief, the electrical characteristics of MOS structures with specially designed distributions of Si nanocrystals (nc-Si) embedded in the oxides were investigated, and very different behaviors in the electrical characteristics are observed as a result of the difference in the nc-Si distribution. For the case of nc-Si being confined in a layer in the oxide close to the gate, charging and discharging the nc-Si lead to a shift in the flat-band voltage, and a small difference in the location of the peak concentration of nc-Si can yield a large difference in the memory programming characteristics. However, for the case of nc-Si distributed throughout the oxide with a high concentration, charging and discharging the nc-Si cause a modulation in the capacitance magnitude instead of the flat-band voltage shift. The difference between the two cases highlights the importance of the nc-Si distribution in the memory device applications of the nc-Si.
URI: https://hdl.handle.net/10356/90763
http://hdl.handle.net/10220/6415
ISSN: 0018-9383
DOI: http://dx.doi.org/10.1109/TED.2006.870528
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Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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