Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90694
Title: Built-in electric field enhancement/retardation on intermixing
Authors: Xu, C. D.
Chin, Mee Koy
Mei, Ting
Dong, Jian Rong
Chua, Soo Jin
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2007
Source: Xu, C. D., Chin, M. K., Mei, T., Dong, J. R., & Chua, S. J. (2007). Built-in electric field enhancement/retardation on intermixing. Applied physics letters, 91, 1-3.
Series/Report no.: Applied physics letters
Abstract: The built-in electric field may impose a drift on charged point defects and may thus enhance or retard the intermixing during annealing. Electric field is built-in near the surface due to the pinning of surface Fermi level after argon plasma treatment on InP surfaces of InP/InGaAs quantum well samples. Subsequent annealing leads to different intermixing results due to the different field directions on InP cap layers in different doping types. Experiments also showed different influences of the built-in field on the two sublattices largely due to different charge numbers of point defects on the respective sublattices.
URI: https://hdl.handle.net/10356/90694
http://hdl.handle.net/10220/6417
ISSN: 0003-6951
DOI: http://dx.doi.org/10.1063/1.2805018
Rights: Applied Physics Letters © copyright 2007. The journal's website is located at http://apl.aip.org/applab/v91/i18/p181111_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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