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Title: Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure
Authors: Tang, Xiaohong
Mei, Ting
Wang, Yixin
Djie, Hery Susanto
Chin, Mee Koy
Nie, Dong
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2006
Source: Mei, T., Tang, X., Wang, Y., Djie, H. S., Chin, M. K., & Nie, D. (2006). Argon plasma exposure enhanced intermixing in an undoped InGaAsP/InP quantum-well structure. Journal of applied physics, 100, 1-3.
Series/Report no.: Journal of applied physics
Abstract: Intermixing in an undoped InGaAsP/InP quantum well structure enhanced by near-surface defects generated using inductively coupled argon plasma is temperature dependent. The group III sublattice interdiffusion can be four times as fast as that of the group V sublattice for the annealing temperature lower than 600  degrees celcius, and a maximum band gap redshift of 50 nm is obtained in experiment. Blueshift is obtained at 700 degrees celcius when the group V sublattice interdiffusion becomes appreciable.
ISSN: 0021-8979
DOI: 10.1063/1.2227267
Rights: Journal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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