Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90930
Title: Plasma-induced quantum well intermixing for monolithic photonic integration
Authors: Djie, Hery Susanto
Mei, Ting
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2005
Source: Djie, H. S., & Mei, T. (2005). Plasma-induced quantum well intermixing for monolithic photonic integration. IEEE Journal of Selected Topics in Quantum Electronics, 11(2), 373-382.
Series/Report no.: IEEE journal of selected topics in quantum electronics
Abstract: Plasma-induced quantum well intermixing (QWI) has been developed for tuning the bandgap of III-V compound semiconductor materials using an inductively coupled plasma system at the postgrowth level. In this paper, we present the capability of the technique for a high-density photonic integration process, which offers three aspects of investigation: 1) universality to a wide range of III-V compound material systems covering the wavelength range from 700 to 1600 nm; 2) spatial resolution of the process; and 3) single-step multiple bandgap creation. To verify the monolithic integration capability, a simple photonic integrated chip has been fabricated using Ar plasma-induced QWI in the form of a two-section extended cavity laser diode, where an active laser is integrated with an intermixed low-loss waveguide.
URI: https://hdl.handle.net/10356/90930
http://hdl.handle.net/10220/6420
ISSN: 1077-260X
DOI: http://dx.doi.org/10.1109/JSTQE.2005.845611
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Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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