Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90509
Title: Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
Authors: Ding, Liang
Liu, Yang
Chen, Tupei
Cen, Zhan Hong
Wong, Jen It
Yang, Ming
Liu, Zhen
Goh, Wei Peng
Zhu, Fu Rong
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2009
Source: Cen, Z. H., Chen, T. P., Ding, L., Liu, Y., Wong, J. I., Yang, M., et al. (2009). Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions. Applied Physics Letters, 94, 1-3.
Series/Report no.: Applied physics letters
Abstract: Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100  degree celcius. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼ 3.0 eV (415 nm) and the strong green-yellow band at ∼ 2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼ 3.8 eV and the near infrared band at ∼ 1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.
URI: https://hdl.handle.net/10356/90509
http://hdl.handle.net/10220/6423
ISSN: 0003-6951
DOI: http://dx.doi.org/10.1063/1.3068002
Rights: Applied Physics Letters © copyright 2009 American Institute of Physics. This journal's website is located at http://apl.aip.org/applab/v94/i4/p041102_s1?isAuthorized=no.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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