Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions
Cen, Zhan Hong
Wong, Jen It
Goh, Wei Peng
Zhu, Fu Rong
Fung, Stevenson Hon Yuen
Date of Issue2009
School of Electrical and Electronic Engineering
Institute of Materials Research and Engineering
Strong visible electroluminescence (EL) has been observed from a 30 nm silicon nitride thin film multiply implanted with Si ions and annealed at 1100 degree celcius. The EL intensity shows a linear relationship with the current transport in the thin film at lower voltages, but a departure from the linear relationship with a quenching in the EL intensity is observed at higher voltages. The EL spectra show two primary EL bands including the predominant violet band at ∼ 3.0 eV (415 nm) and the strong green-yellow band at ∼ 2.2 eV (560 nm). Two weak bands including the ultraviolet band at ∼ 3.8 eV and the near infrared band at ∼ 1.45 eV emerge at high voltages. The evolution of each EL band with the voltage has been examined. The phenomena observed are explained, and the EL mechanisms are discussed.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Applied physics letters
Applied Physics Letters © copyright 2009 American Institute of Physics. This journal's website is located at http://apl.aip.org/applab/v94/i4/p041102_s1?isAuthorized=no.