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|Title:||Photon-induced conduction modulation in SiO2 thin films embedded with Ge nanocrystals||Authors:||Tan, M. C.
Wong, Jen It
Yu, Siu Fung
Zhu, Fu Rong
Fung, Stevenson Hon Yuen
Tung, Chih Hang
Trigg, Alastair David
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics||Issue Date:||2007||Source:||Ding, L., Chen, T. P., Yang, M., Wong, J. I., Liu, Y., Yu, S. F., et al (2007). Photon-induced conduction modulation in SiO2 thin films embedded with Ge nanocrystals. Applied Physics Letters, 90, 1-3.||Series/Report no.:||Applied physics letters||Abstract:||The authors report the photon-induced conduction modulation in SiO2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices.||URI:||https://hdl.handle.net/10356/90603
|ISSN:||0003-6951||DOI:||http://dx.doi.org/10.1063/1.2711198||Rights:||Applied Physics Letters © copyright 2007 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v90/i10/p103102_s1?isAuthorized=no||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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