Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/91942
Title: Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure
Authors: Liu, Yang
Chen, Tupei
Ding, Liang
Yang, Ming
Wong, Jen It
Ng, Chi Yung
Yu, Siu Fung
Li, Zeng Xiang
Yuen, Chau
Zhu, Fu Rong
Fung, Stevenson Hon Yuen
Tan, M. C.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2007
Source: Liu, Y., Chen, T. P., Ding, L., Yang, M., Wong, J. I., Ng, C. Y., et al. (2007). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. Journal of applied physics, 101, 1-4.
Series/Report no.: Journal of applied physics
Abstract: We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.
URI: https://hdl.handle.net/10356/91942
http://hdl.handle.net/10220/6425
ISSN: 0021-8979
DOI: 10.1063/1.2713946
Rights: Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i10/p104306_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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