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|Title:||Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure||Authors:||Liu, Yang
Wong, Jen It
Ng, Chi Yung
Yu, Siu Fung
Li, Zeng Xiang
Zhu, Fu Rong
Fung, Stevenson Hon Yuen
Tan, M. C.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics||Issue Date:||2007||Source:||Liu, Y., Chen, T. P., Ding, L., Yang, M., Wong, J. I., Ng, C. Y., et al. (2007). Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure. Journal of applied physics, 101, 1-4.||Series/Report no.:||Journal of applied physics||Abstract:||We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm SiO2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p-type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.||URI:||https://hdl.handle.net/10356/91942
|ISSN:||0021-8979||DOI:||10.1063/1.2713946||Rights:||Journal of Applied Physics © copyright 2007 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v101/i10/p104306_s1?isAuthorized=no||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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