dc.contributor.authorNg, Chi Yung
dc.contributor.authorChen, Tupei
dc.contributor.authorZhao, P.
dc.contributor.authorDing, Liang
dc.contributor.authorLiu, Yang
dc.contributor.authorTseng, Ampere A.
dc.contributor.authorFung, Stevenson Hon Yuen
dc.date.accessioned2010-09-07T08:17:15Z
dc.date.available2010-09-07T08:17:15Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationNg, C. Y., Chen, T. P., Zhao, P., Ding, L., Liu, Y., Tseng, A. A., et al. (2006). Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams. Journal of Applied Physics, 99, 1-3.
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10220/6426
dc.description.abstractA nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also.en_US
dc.format.extent3 p.en_US
dc.language.isoenen_US
dc.relation.ispartofseriesJournal of applied physicsen_US
dc.rightsJournal of Applied Physics © copyright 2006 American Institute of Physics. The journal's website is located at http://jap.aip.org/japiau/v99/i10/p106105_s1?isAuthorized=noen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
dc.titleElectrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beamsen_US
dc.typeJournal Article
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.2191737
dc.description.versionPublished versionen_US


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