Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/90605
Title: Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals
Authors: Ng, Chi Yung
Chen, Tupei
Yang, Ming
Yang, Jian Bo
Ding, Liang
Li, Chang Ming
Du, A.
Trigg, Alastair David
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2006
Source: Ng, C. Y., Chen, T. P., Yang, M., Yang, J. B., Ding, L., Li, C. M., et al. (2006). Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals. IEEE Transactions on Electron Devices, 53(4), 663-667.
Series/Report no.: IEEE transactions on electron devices
Abstract: A nonvolatile memory based on silicon nanocrystals (nc-Si) synthesized with very-low-energy Si+ implantation is fabricated, and the memory performance under the programming/erasing of either Fowler-Nordheim (FN)/FN or channel hot electron (CHE)/FN at both room temperature and 85°C is investigated. The CHE programming has a larger memory window, a better endurance, and a longer retention time as compared to FN programming. In addition, the CHE programming yields less stress-induced leakage current than FN programming, suggesting that it produces less damage to the gate oxide and the oxide/Si interface. Detailed discussions on the impact of the programming mechanisms are presented.
URI: https://hdl.handle.net/10356/90605
http://hdl.handle.net/10220/6427
ISSN: 0018-9383
DOI: http://dx.doi.org/10.1109/TED.2006.870281
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Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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