Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/92087
Title: Tight binding description on the band gap opening of pyrene-dispersed graphene
Authors: Chen, Dongmeng
Shenai, Prathamesh Mahesh
Zhao, Yang
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2011
Source: Chen, D. M., Shenai, P. M., & Zhao, Y. (2011). Tight Binding Description on Band Gap Opening of Pyrene-dispersed Graphene. Physical Chemistry Chemical Physics, 13, 1515-1520.
Series/Report no.: Physical chemistry chemical physics
Abstract: Opening up a band gap in graphene holds a crucial significance in the realization of graphene based electronics. Doping with organic molecules to alter the electronic properties of graphene is perceived as an effective band gap engineering approach. Using the tight binding model, we examined the band gap opening of mono layer graphene due to the adsorption of pyrene molecules on both of its sides. It was found that the breakdown of the sublattice symmetry in pyrene-dispersed graphene leads to a band gap of ~10 meV.
URI: https://hdl.handle.net/10356/92087
http://hdl.handle.net/10220/6735
DOI: 10.1039/C0CP00909A
Rights: © 2011 Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by Physical Chemistry Chemical Physics, Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [DOI: http://dx.doi.org/10.1039/C0CP00909A ]
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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